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BSC032N03S
RoHS
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Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 50A TDSON-8
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Buying Options
Total Price: USD $0.43
Unit Price: USD $0.433291
≥1 USD $0.433291
≥10 USD $0.408767
≥100 USD $0.385624
≥500 USD $0.363799
≥1000 USD $0.34321
Inventory: 5293
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series OptiMOS?
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 235
Current Rating 50A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 5080pF @ 15V
Current - Continuous Drain (Id) @ 25°C 23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.0049Ohm
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 550 mJ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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