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IRF6678TR1PBF

Infineon Technologies
RoHS
/
Package DirectFET? Isometric MX
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 30A DIRECTFET
PDF
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Buying Options
Total Price: USD $2.63
Unit Price: USD $2.62675
≥1 USD $2.62675
≥10 USD $2.15555
≥100 USD $2.0881
≥500 USD $2.02065
≥1000 USD $1.9532
Inventory: 8178
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Supplier Device Package DIRECTFET? MX

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 2.2MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 30A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 89W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5640pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 4.5V
Rise Time 71ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.1 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 1.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 5.64nF
Drain to Source Resistance 3mOhm
Rds On Max 2.2 mΩ
Nominal Vgs 1.35 V

Dimensions

Height 506μm
Length 6.35mm
Width 5.05mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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