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IRF6626TR1PBF
RoHS
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Package DirectFET? Isometric ST
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 16A DIRECTFET
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Buying Options
Total Price: USD $9.91
Unit Price: USD $9.9104
≥1 USD $9.9104
≥10 USD $8.132
≥100 USD $7.8774
≥500 USD $7.62375
≥1000 USD $7.36915
Inventory: 1484
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric ST
Number of Pins 5
Supplier Device Package DIRECTFET? ST
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Resistance 5.4MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 16A
Number of Elements 1
Power Dissipation-Max 2.2W Ta 42W Tc
Power Dissipation 42W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2380pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 72A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.38nF
Drain to Source Resistance 7.1mOhm
Rds On Max 5.4 mΩ
Nominal Vgs 2.35 V
Dimensions
Height 506μm
Length 4.826mm
Width 3.95mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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