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FQPF17N40
RoHS
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Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 400V 9.5A TO-220F
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Buying Options
Total Price: USD $2.77
Unit Price: USD $2.774
≥1 USD $2.774
≥10 USD $2.2762
≥100 USD $2.20495
≥500 USD $2.1337
≥1000 USD $2.06245
Inventory: 9479
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 16A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 56W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 56W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 4.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.5A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 185 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 105 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 9.5A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.27Ohm
Drain to Source Breakdown Voltage 400V
Avalanche Energy Rating (Eas) 1000 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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