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FQB11N40TM

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.4A Tc 11.4A 3.13W 60ns
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Buying Options
Total Price: USD $0.79
Unit Price: USD $0.789212
≥1 USD $0.789212
≥10 USD $0.74454
≥100 USD $0.702394
≥500 USD $0.662638
≥1000 USD $0.625132
Inventory: 7338
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2
Supplier Device Package D2PAK (TO-263AB)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 11.4A
Number of Elements 1
Power Dissipation-Max 3.13W Ta 147W Tc
Element Configuration Single
Power Dissipation 3.13W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 480mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.4A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 100ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 11.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Input Capacitance 1.4nF
Drain to Source Resistance 380mOhm
Rds On Max 480 mΩ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

No data

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