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HUF75333P3
RoHS
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Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 60A TO-220AB
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥100 USD $0.21375
≥500 USD $0.2071
≥1000 USD $0.20045
Inventory: 7476
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 60A
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Power Dissipation 150W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 66A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 20V
Rise Time 55ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 66A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 1.3nF
Drain to Source Resistance 16mOhm
Rds On Max 16 mΩ
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