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IRLL2703PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 3.9A SOT223
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Inventory: 9057
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Supplier Device Package SOT-223
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 60mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 3.9A
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 7.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Rise Time 24ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 6.9 ns
Continuous Drain Current (ID) 3.9A
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 530pF
Recovery Time 63 ns
Drain to Source Resistance 70mOhm
Rds On Max 45 mΩ
Nominal Vgs 2.4 V
Dimensions
Height 1.7mm
Length 6.7mm
Width 3.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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