Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IRF3707ZPBF
RoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 59A TO-220AB
PDF
Buying Options
Total Price: USD $0.24
Unit Price: USD $0.238051
≥1 USD $0.238051
≥10 USD $0.22458
≥100 USD $0.211872
≥500 USD $0.199875
≥1000 USD $0.188565
Inventory: 4004
Minimum: 1
-
+
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Dimensions
Height 8.763mm
Length 10.5156mm
Width 4.69mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 9.5Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 59A
Number of Elements 1
Power Dissipation-Max 57W Tc
Power Dissipation 57W
Turn On Delay Time 9.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 41ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 59A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 1.21nF
Recovery Time 21 ns
Drain to Source Resistance 12.5mOhm
Rds On Max 9.5 mΩ
Nominal Vgs 1.8 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
IRF730STRLPBF
Vishay SiliconixRecommended For You
MUN2132T1G
ON Semiconductor