Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 107W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.3 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 210 mJ