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PMV30UN,215

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 5.7A SOT-23
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Buying Options
Total Price: USD $0.21
Unit Price: USD $0.20805
≥1 USD $0.20805
≥10 USD $0.171
≥100 USD $0.1653
≥500 USD $0.1596
≥1000 USD $0.15485
Inventory: 5345
Minimum: 1
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.9W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 20V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
JEDEC-95 Code TO-236AB
Drain Current-Max (Abs) (ID) 5.7A
Drain-source On Resistance-Max 0.036Ohm
DS Breakdown Voltage-Min 20V

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