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NTD14N03RG
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Surface Mount N-Channel Single Mosfet Transistor 2.5A Ta 2.5A 1.56W 27ns
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Buying Options
Total Price: USD $0.87
Unit Price: USD $0.867558
≥1 USD $0.867558
≥10 USD $0.818449
≥100 USD $0.772121
≥500 USD $0.728417
≥1000 USD $0.687185
Inventory: 7814
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 14A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.04W Ta 20.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 115pF @ 20V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 5V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 9.6 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11.4A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 28A
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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