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SPP20N60S5
RoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 20A TO-220AB
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Buying Options
Total Price: USD $6.3
Unit Price: USD $6.2985
≥1 USD $6.2985
≥10 USD $5.168
≥50 USD $5.0065
≥100 USD $4.845
Inventory: 4352
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Dimensions
Height 4.4mm
Length 8.64mm
Width 10.26mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 20A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection DRAIN
Turn On Delay Time 120 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 4.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 40A
Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 690 mJ
Nominal Vgs 4.5 V
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
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