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BSP315P-E6327

Infineon Technologies
RoHS
/
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 60V 1.17A SOT-223
PDF
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Buying Options
Total Price: USD $0.6
Unit Price: USD $0.595541
≥1 USD $0.595541
≥10 USD $0.561828
≥100 USD $0.530027
≥500 USD $0.500026
≥1000 USD $0.471726
Inventory: 5090
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package PG-SOT223-4

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -1.17A
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Power Dissipation 1.8W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id 2V @ 160μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.17A Ta
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.17A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 160pF
Rds On Max 800 mΩ

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