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FCP190N65F
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 20.6A TO220-3
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Buying Options
Total Price: USD $12.89
Unit Price: USD $12.8877
≥1 USD $12.8877
≥10 USD $10.57445
≥100 USD $10.24385
≥500 USD $9.91325
≥1000 USD $9.58265
Inventory: 7278
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series FRFET?, SuperFET? II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 3225pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.6A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 20.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 400 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 16.3mm
Length 10.67mm
Width 4.7mm
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
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