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IPB100N04S2L03ATMA2
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 100A TO263-3
PDF
Buying Options
Total Price: USD $1.42
Unit Price: USD $1.424882
≥1 USD $1.424882
≥10 USD $1.344235
≥100 USD $1.268143
≥500 USD $1.196363
≥1000 USD $1.128641
Inventory: 4425
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 31 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Rise Time 51 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 810 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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