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IPL60R180P6AUMA1
RoHS 
RoHS compliant
RoHS compliantPackage 4-PowerTSFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 4VSON
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Buying Options
Total Price: USD $1.06
Unit Price: USD $1.056529
≥1 USD $1.056529
≥10 USD $0.996724
≥100 USD $0.940302
≥500 USD $0.887083
≥1000 USD $0.83687
Inventory: 1341
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? P6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Number of Terminations 4
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 176W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 750μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22.4A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 7.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.8 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 22.4A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.18Ohm
Pulsed Drain Current-Max (IDM) 62A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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