Operating Temperature -55°C~150°C TJ
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 156W Tc
Rds On (Max) @ Id, Vgs 2.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 115μA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 4.5V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V