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IPA65R125C7XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V TO220-3
PDF
Buying Options
Total Price: USD $1.61
Unit Price: USD $1.612796
≥1 USD $1.612796
≥10 USD $1.521502
≥100 USD $1.435381
≥500 USD $1.354136
≥1000 USD $1.277484
Inventory: 9824
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS? C7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 32W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 400V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 71 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.125Ohm
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 89 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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