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IPP60R125P6XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V TO220-3
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Buying Options
Total Price: USD $4.52
Unit Price: USD $4.5182
≥1 USD $4.5182
≥10 USD $3.7069
≥100 USD $3.591
≥500 USD $3.4751
≥1000 USD $3.3592
Inventory: 6400
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS? P6
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 219W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 11.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 960μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 100V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 9 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 30A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.125Ohm
Pulsed Drain Current-Max (IDM) 87A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
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