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AUIRFS8407
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
INFINEON AUIRFS8407 MOSFET Transistor, N Channel, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
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Buying Options
Total Price: USD $2.27
Unit Price: USD $2.26955
≥1 USD $2.26955
≥10 USD $1.862
≥100 USD $1.80405
≥500 USD $1.7461
≥1000 USD $1.6872
Inventory: 1379
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number IRFS8407
Number of Channels 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Power Dissipation 230W
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Nominal Vgs 3 V
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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