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IPW60R017C7XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
HIGH POWER_NEW
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Buying Options
Total Price: USD $14.77
Unit Price: USD $14.7668
≥1 USD $14.7668
≥10 USD $12.1163
≥100 USD $11.7382
≥500 USD $11.35915
≥1000 USD $10.9801
Inventory: 8638
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Technical
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Power Dissipation 446W
Case Connection DRAIN
Turn On Delay Time 30 ns
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 650V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 106 ns
Continuous Drain Current (ID) 109A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 495A
Avalanche Energy Rating (Eas) 582 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 15mOhm
Dimensions
Height 25.4mm
Compliance
RoHS Status ROHS3 Compliant
Physical
Package / Case TO-247-3
Surface Mount NO
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