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TK20N60W,S1VF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Buying Options
Total Price: USD $0
Unit Price: USD $0.00285
≥1 USD $0.00285
≥500 USD $0.00285
≥1000 USD $0.00285
≥2000 USD $0.00285
≥5000 USD $0.00285
≥10000 USD $0.0019
Inventory: 9620
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2013
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 165W Tc
Element Configuration Single
Turn On Delay Time 50 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 155mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 300V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.68nF
Drain to Source Resistance 130mOhm
Rds On Max 155 mΩ

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247
Weight 38.000013g

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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