Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 33W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1819pF @ 400V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 12A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.099Ohm
Pulsed Drain Current-Max (IDM) 83A
Avalanche Energy Rating (Eas) 97 mJ