Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.19Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 690 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR