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STP8NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 7A TO-220
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.51205
≥1 USD $0.51205
≥10 USD $0.4199
≥100 USD $0.4066
≥500 USD $0.39425
≥1000 USD $0.38095
Inventory: 3791
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP8N
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.7Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 200 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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