Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
STW55NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-247 Tube
PDF
/
Buying Options
Total Price: USD $18.26
Unit Price: USD $18.2571
≥1 USD $18.2571
≥10 USD $14.98055
≥100 USD $14.5122
≥500 USD $14.04385
≥1000 USD $13.5755
Inventory: 1379
Minimum: 1
-
+
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 60MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW55N
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350W
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 68 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 96 ns
Turn-Off Delay Time 188 ns
Continuous Drain Current (ID) 51A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 204A
Avalanche Energy Rating (Eas) 850 mJ
Max Junction Temperature (Tj) 150°C
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 24.45mm
Length 15.75mm
Width 5.15mm
Alternative Model
SDTC114YET1G
ON SemiconductorRecommended For You
IPD90N04S3H4ATMA1
Infineon Technologies