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IRF740AS
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 400V 10A D2PAK
PDF
Buying Options
Total Price: USD $0.27
Unit Price: USD $0.266
≥1 USD $0.266
≥10 USD $0.2185
≥100 USD $0.21185
≥500 USD $0.2052
≥1000 USD $0.19855
Inventory: 6481
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 125W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Input Capacitance 1.03nF
Drain to Source Resistance 550mOhm
Rds On Max 550 mΩ
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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