Welcome to flywing-tech.com
  • English
IRLML2402TR image
Favorite
IRLML2402TR image
Favorite

IRLML2402TR

Infineon Technologies
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 1.2A SOT-23
PDF
/
Buying Options
Total Price: USD $0.08
Unit Price: USD $0.080331
≥1 USD $0.080331
≥10 USD $0.075787
≥100 USD $0.0715
≥500 USD $0.067451
≥1000 USD $0.063631
Inventory: 8522
Minimum: 1
-
+

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Packaging Cut Tape (CT)
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 930mA, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
JEDEC-95 Code TO-236AB
Drain Current-Max (Abs) (ID) 1.2A
Drain-source On Resistance-Max 0.25Ohm
DS Breakdown Voltage-Min 20V
Power Dissipation-Max (Abs) 0.54W

Alternative Model

Recommended For You