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IRF9520
RoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 6.8A TO-220AB
PDF
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5396
≥1 USD $0.5396
≥10 USD $0.4427
≥100 USD $0.4294
≥500 USD $0.41515
≥1000 USD $0.4009
Inventory: 8427
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 600mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
Turn On Delay Time 9.6 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 600mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 6.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 390pF
Drain to Source Resistance 600mOhm
Rds On Max 600 mΩ
Alternative Model
TSM60N380CI C0G
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