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IRFD110
RoHS
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Package 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 1A 4-DIP
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Buying Options
Total Price: USD $0.43
Unit Price: USD $0.43035
≥1 USD $0.43035
≥10 USD $0.35245
≥100 USD $0.342
≥500 USD $0.3306
≥1000 USD $0.32015
Inventory: 6893
Minimum: 1
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Technical Details
Physical
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 540mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 1A
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Power Dissipation 1.3W
Turn On Delay Time 6.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 180pF
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ
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