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IRFL014NTRPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 1.9A SOT223
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
Inventory: 9734
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 160mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1.9A
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 6.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 7.1 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.3 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 1.9A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.7A
Drain to Source Breakdown Voltage 55V
Recovery Time 61 ns
Nominal Vgs 4 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.4478mm
Length 6.6802mm
Width 3.7mm
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON
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