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FDD7N20TM
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 5A D-PAK
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Buying Options
Total Price: USD $0.25
Unit Price: USD $0.2489
≥1 USD $0.2489
≥10 USD $0.20425
≥100 USD $0.19855
≥500 USD $0.1919
≥1000 USD $0.18525
Inventory: 2784
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 690mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 43W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 43W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 690m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 5V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 62.5 mJ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
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