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SI6933DQ-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 8-TSSOP (0.173, 4.40mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 30V 8-TSSOP
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.4845
≥1 USD $0.4845
≥10 USD $0.3971
≥100 USD $0.38475
≥500 USD $0.3724
≥1000 USD $0.36005
Inventory: 6887
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Weight 157.991892mg
Transistor Element Material SILICON
Dimensions
Height 1mm
Length 3mm
Width 4.4mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 45mOhm
Terminal Finish MATTE TIN
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 13 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 45m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 10 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) -2.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.5A
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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