Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Base Part Number IRF9358PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.7 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.3m Ω @ 9.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 146 ns
Continuous Drain Current (ID) 9.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 73A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate