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FDMS3606S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET iFET - Smart Harvest
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Buying Options
Total Price: USD $4.15
Unit Price: USD $4.1477
≥1 USD $4.1477
≥10 USD $3.40385
≥100 USD $3.29745
≥500 USD $3.19105
≥1000 USD $3.08465
Inventory: 8504
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 171mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Turn On Delay Time 15 ns
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1785pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A 27A
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 5.5 ns
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 27A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 13A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1mm
Length 6mm
Width 5mm
Compliance
RoHS Status ROHS3 Compliant
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