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NTLJD2104PTAG
RoHS
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Package 6-WDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 8nC @ 4.5V 2.4A 700mW 16.2ns
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Buying Options
Total Price: USD $0.38
Unit Price: USD $0.377537
≥1 USD $0.377537
≥10 USD $0.356164
≥100 USD $0.336008
≥500 USD $0.316988
≥1000 USD $0.299044
Inventory: 3938
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 700mW
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 467pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 12.3ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 16.2 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 2.4A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.5A
Drain-source On Resistance-Max 0.12Ohm
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
No data
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