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SI1029X-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 60V SOT563F
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Buying Options
Total Price: USD $5.53
Unit Price: USD $5.52995
≥1 USD $5.52995
≥10 USD $4.53815
≥100 USD $4.39565
≥500 USD $4.2541
≥1000 USD $4.11255
Inventory: 8713
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Supplier Device Package SC-89-6
Weight 32.006612mg
Dimensions
Height 600μm
Length 1.7mm
Width 1.2mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 4Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 250mW
Base Part Number SI1029
Number of Elements 2
Number of Channels 2
Element Configuration Single
Power Dissipation 250mW
Turn On Delay Time 20 ns
Power - Max 250mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Current - Continuous Drain (Id) @ 25°C 305mA 190mA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Input Capacitance 30pF
FET Feature Logic Level Gate
Drain to Source Resistance 4Ohm
Rds On Max 3 Ω
Nominal Vgs 2.5 V
Alternative Model
AOWF240
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