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FDS8958
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
PowerTrench? Tape & Reel (TR) Surface Mount N and P-Channel Mosfet Array 7A 5A 5A 900mW 12.3ns
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 2457
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish Tin (Sn)
Max Power Dissipation 900mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 7A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 789pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7A 5A
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 9.7ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 12.3 ns
Turn-Off Delay Time 19.8 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.028Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 54 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Alternative Model
No data
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