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NTQD6866R2G
RoHS
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Package 8-TSSOP (0.173, 4.40mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) COMMON DRAIN 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 22nC @ 4.5V 4.7A 940mW 90ns
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Buying Options
Total Price: USD $0.3
Unit Price: USD $0.296419
≥1 USD $0.296419
≥10 USD $0.279635
≥100 USD $0.263808
≥500 USD $0.24888
≥1000 USD $0.234792
Inventory: 3140
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 940mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6.9A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 6.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 45ns
Fall Time (Typ) 90 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.7A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.032Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 175 pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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