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IRF7379PBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V 8-SOIC
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Buying Options
Total Price: USD $0.24
Unit Price: USD $0.24035
≥1 USD $0.24035
≥10 USD $0.1976
≥100 USD $0.19095
≥500 USD $0.18525
≥1000 USD $0.1786
Inventory: 2505
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 5.8A
Base Part Number IRF7379PBF
Number of Elements 2
Row Spacing 6.3 mm
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.8A 4.3A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 17ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 18 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 4.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 46A
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 1 V
Alternative Model
B245BE-13
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