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IRF7530PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 5.4A MICRO8
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Buying Options
Total Price: USD $2.63
Unit Price: USD $2.62675
≥1 USD $2.62675
≥10 USD $2.15555
≥100 USD $2.0881
≥500 USD $2.02065
≥1000 USD $1.9532
Inventory: 7074
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Technical
Packaging Tube
Published 2004
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 1.3W
Terminal Form GULL WING
Current Rating 5.4A
Base Part Number IRF7530PBF
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 8.5 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 30m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 11ns
Fall Time (Typ) 16 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 33 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Dimensions
Height 910μm
Length 3.048mm
Width 3.048mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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