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BSS8402DW-7
RoHS
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Package 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 60 / -50V 200mW
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.057
≥1 USD $0.057
≥500 USD $0.04655
≥1000 USD $0.0456
≥2000 USD $0.0437
≥5000 USD $0.04275
≥10000 USD $0.038
Inventory: 2783
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Dimensions
Height 1mm
Length 2.2mm
Width 1.35mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 115mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number BSS8402DW
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 10 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA 130mA
Drain to Source Voltage (Vdss) 60V 50V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 130mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.115A
Drain to Source Breakdown Voltage -50V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF
Compliance
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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