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STS5DNF20V
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N-Ch 20 Volt 5 Amp
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Buying Options
Total Price: USD $0.11
Unit Price: USD $0.11115
≥1 USD $0.11115
≥500 USD $0.0912
≥1000 USD $0.08835
≥2000 USD $0.0855
≥5000 USD $0.08265
≥10000 USD $0.0741
Inventory: 7023
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET? II
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 40mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS5D
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 4.5V
Rise Time 33 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.65mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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