Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 290mW Ta
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 280m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 860mA Ta
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 860mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.86A
Drain-source On Resistance-Max 0.28Ohm
DS Breakdown Voltage-Min 8V