Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
SI4403BDY-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 7.3A 8SOIC
PDF
/
Buying Options
Total Price: USD $5.28
Unit Price: USD $5.27725
≥1 USD $5.27725
≥10 USD $4.3301
≥100 USD $4.1952
≥500 USD $4.05935
≥1000 USD $3.92445
Inventory: 7088
Minimum: 1
-
+
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.35W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.35W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 17m Ω @ 9.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350μA
Current - Continuous Drain (Id) @ 25°C 7.3A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 7.3A
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Compliance
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Alternative Model
SI4062DY-T1-GE3
Vishay SiliconixRecommended For You
IPB049NE7N3 G
Infineon Technologies AG