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IRF1902TRPBF
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 4.2A 8-SOIC
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Buying Options
Total Price: USD $22.25
Unit Price: USD $22.2471
≥1 USD $22.2471
≥10 USD $18.25425
≥100 USD $17.68425
≥500 USD $17.1133
≥1000 USD $16.5433
Inventory: 4269
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 310pF
Drain to Source Resistance 85mOhm
Rds On Max 85 mΩ
Compliance
RoHS Status RoHS Compliant
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