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SI4466DY-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 9.5A 8-SOIC
PDF
Buying Options
Total Price: USD $27.65
Unit Price: USD $27.64975
≥1 USD $27.64975
≥10 USD $22.68695
≥100 USD $21.97825
≥500 USD $21.2686
≥1000 USD $20.5599
Inventory: 4485
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 13.5A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.5A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 9.5A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 20V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
IRF1010EZSTRLP
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