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SI2335DS-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET 12V 4.0A 1.25W 51mohm @ 4.5V
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Buying Options
Total Price: USD $0.05
Unit Price: USD $0.047247
≥1 USD $0.047247
≥500 USD $0.034749
≥1000 USD $0.028948
≥2000 USD $0.02656
≥5000 USD $0.024816
≥10000 USD $0.023088
≥15000 USD $0.022332
≥50000 USD $0.021961
Inventory: 8678
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 51m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.051Ohm
Drain to Source Breakdown Voltage 12V

Compliance

RoHS Status ROHS3 Compliant

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