Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 273μA
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 120A
Drain-source On Resistance-Max 0.0023Ohm
Pulsed Drain Current-Max (IDM) 480A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 1100 mJ