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IPP023NE7N3G

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 75V 120A TO220
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Buying Options
Total Price: USD $5.75
Unit Price: USD $5.748101
≥1 USD $5.748101
≥10 USD $5.422734
≥100 USD $5.11579
≥500 USD $4.82622
≥1000 USD $4.55303
Inventory: 2686
Minimum: 1
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series OptiMOS? 3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 273μA
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 120A
Drain-source On Resistance-Max 0.0023Ohm
Pulsed Drain Current-Max (IDM) 480A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 1100 mJ

Compliance

RoHS Status RoHS Compliant

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