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IRF6668TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage DirectFET? Isometric MZ
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFE
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.8854
≥1 USD $0.8854
≥10 USD $0.72675
≥100 USD $0.70395
≥500 USD $0.68115
≥1000 USD $0.65835
Inventory: 958
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 55A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 13 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 7.1 ns
Continuous Drain Current (ID) 55mA
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.015Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 170A
Avalanche Energy Rating (Eas) 24 mJ
Dimensions
Height 533.4μm
Length 6.35mm
Width 5.0546mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MZ
Number of Pins 3
Transistor Element Material SILICON
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